High relaxation oscillation frequency (beyond 10 GHz) of GaAlAs multiquantum well lasers

Direct modulation bandwidth of GaAlAs multiquantum well (MQW) lasers with 5 nm-thick GaAs wells was investigated. It was experimentally found that relaxation oscillation frequency of MQW lasers is beyond 10 GHz, which is twice that of double heterostructure lasers. This result was confirmed by theor...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1985-01, Vol.24 (7), p.L539-L541
Hauptverfasser:	VOMI, K, CHINONE, N, OHTOSHI, T, KAJIMURA, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
Online-Zugang:	Volltext
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Zusammenfassung:	Direct modulation bandwidth of GaAlAs multiquantum well (MQW) lasers with 5 nm-thick GaAs wells was investigated. It was experimentally found that relaxation oscillation frequency of MQW lasers is beyond 10 GHz, which is twice that of double heterostructure lasers. This result was confirmed by theoretical analysis.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.24.l539