Facet formation in selective silicon epitaxial growth

Facets observed adjacent to insulator films in selective silicon epitaxial growth were studied. The facet formation depended on the crystallographic orientation of the openings, and facets did not appear adjacent to the SiO 2 sidewall parallel to the [100] direction. Facet formation could also be su...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1985-01, Vol.24 (10), p.1267-1269
Hauptverfasser:	ISHITANI, A, KITAJIMA, H, ENDO, N, KASAI, N
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Zusammenfassung:	Facets observed adjacent to insulator films in selective silicon epitaxial growth were studied. The facet formation depended on the crystallographic orientation of the openings, and facets did not appear adjacent to the SiO 2 sidewall parallel to the [100] direction. Facet formation could also be suppressed by using a polysilicon-coated sidewall. Defects in the selective epi-layers were examined using transmission electron microscopy, and facet-free and defect-free epilayers were obtained.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.24.1267