Growth of single domain GaAs layer on (100)-oriented Si substrate by MOCVD
Single domain GaAs layers with satisfactory morphology were grown on (100)-oriented Si substrates by heat treatment of the substrates at above 900°C and subsecquent two-step growth at low temperatures of 450°C or below and by conventional growth temperatures. The grown GaAs layers showed a high mobi...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1984-01, Vol.23 (11), p.L843-L845 |
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| Sprache: | eng |
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| container_end_page | L845 |
|---|---|
| container_issue | 11 |
| container_start_page | L843 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 23 |
| creator | AKIYAMA, M KAWARADA, Y KAMINISHI, K |
| description | Single domain GaAs layers with satisfactory morphology were grown on (100)-oriented Si substrates by heat treatment of the substrates at above 900°C and subsecquent two-step growth at low temperatures of 450°C or below and by conventional growth temperatures. The grown GaAs layers showed a high mobility of 5200 cm
2
V
-1
s
-1
at room temperature with a carrier density of 1×10
16
cm
-3
. |
| doi_str_mv | 10.1143/jjap.23.l843 |
| format | Article |
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2
V
-1
s
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at room temperature with a carrier density of 1×10
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cm
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V
-1
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at room temperature with a carrier density of 1×10
16
cm
-3
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2
V
-1
s
-1
at room temperature with a carrier density of 1×10
16
cm
-3
.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.23.l843</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1984-01, Vol.23 (11), p.L843-L845 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_23_L843 |
| source | Institute of Physics Journals |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Growth of single domain GaAs layer on (100)-oriented Si substrate by MOCVD |
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