Growth of single domain GaAs layer on (100)-oriented Si substrate by MOCVD

Single domain GaAs layers with satisfactory morphology were grown on (100)-oriented Si substrates by heat treatment of the substrates at above 900°C and subsecquent two-step growth at low temperatures of 450°C or below and by conventional growth temperatures. The grown GaAs layers showed a high mobility of 5200 cm 2 V -1 s -1 at room temperature with a carrier density of 1×10 16 cm -3 .