Auto-doping phenomena for the InGaAsP active layer in DH structure grown by LPE

Auto-doping phenomena for the InGaAsP active layer in DH structure grown by LPE

The behavior of diffused Zn and Te impurities in the InGaAsP-InP DH laser structure grown by LPE has been investigated by means of secondary ion mass spectrometry (SIMS) and photoluminescence (PL) technique. Judging from SIMS profiles of these impurities in the InGaAsP active layer, we have found th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 1984-01, Vol.23 (9), p.L700-L702
Hauptverfasser: SASAI, Y, YOSHIOKA, Y, HASE, N
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physical properties of thin films, nonelectronic
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page L702
container_issue 9
container_start_page L700
container_title Japanese Journal of Applied Physics
container_volume 23
creator SASAI, Y
YOSHIOKA, Y
HASE, N
description The behavior of diffused Zn and Te impurities in the InGaAsP-InP DH laser structure grown by LPE has been investigated by means of secondary ion mass spectrometry (SIMS) and photoluminescence (PL) technique. Judging from SIMS profiles of these impurities in the InGaAsP active layer, we have found that a mutual diffusion occurs in this layer and that these impurities at the heterointerface pile up. The study of PL measurements has further shown that the diffused impurities influence the optical properties of the active layer.
doi_str_mv 10.1143/jjap.23.l700
format Article
fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_23_L700</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>9209195</sourcerecordid><originalsourceid>FETCH-LOGICAL-c357t-44f66e9f96566a5208552392794f9bd2dcb20083d07cf9a7bed27dd48726fdb43</originalsourceid><addsrcrecordid>eNo9kLtOwzAARS0EEqWw8QEeGEnx2_UYlT4VqR1gjhw_2lSpE9kJqH9PURHT1ZXOvcMB4BmjCcaMvh2PupsQOmkkQjdghCmTGUOC34IRQgRnTBFyDx5SOl6q4AyPwDYf-jazbVeHPewOLrQnFzT0bYT9wcF1WOo87aA2ff3lYKPPLsI6wPcVTH0cTD9EB_ex_Q6wOsNiN38Ed143yT395Rh8LuYfs1VWbJfrWV5khnLZZ4x5IZzySnAhNCdoyjmhikjFvKossaYiCE2pRdJ4pWXlLJHWsqkkwtuK0TF4vf6a2KYUnS-7WJ90PJcYlb8yys0m35WElsVFxgV_ueKdTkY3Pupg6vS_UQQprDj9AXwbXkA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Auto-doping phenomena for the InGaAsP active layer in DH structure grown by LPE</title><source>Institute of Physics Journals</source><creator>SASAI, Y ; YOSHIOKA, Y ; HASE, N</creator><creatorcontrib>SASAI, Y ; YOSHIOKA, Y ; HASE, N</creatorcontrib><description>The behavior of diffused Zn and Te impurities in the InGaAsP-InP DH laser structure grown by LPE has been investigated by means of secondary ion mass spectrometry (SIMS) and photoluminescence (PL) technique. Judging from SIMS profiles of these impurities in the InGaAsP active layer, we have found that a mutual diffusion occurs in this layer and that these impurities at the heterointerface pile up. The study of PL measurements has further shown that the diffused impurities influence the optical properties of the active layer.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.23.l700</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physical properties of thin films, nonelectronic ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Japanese Journal of Applied Physics, 1984-01, Vol.23 (9), p.L700-L702</ispartof><rights>1985 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c357t-44f66e9f96566a5208552392794f9bd2dcb20083d07cf9a7bed27dd48726fdb43</citedby><cites>FETCH-LOGICAL-c357t-44f66e9f96566a5208552392794f9bd2dcb20083d07cf9a7bed27dd48726fdb43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=9209195$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SASAI, Y</creatorcontrib><creatorcontrib>YOSHIOKA, Y</creatorcontrib><creatorcontrib>HASE, N</creatorcontrib><title>Auto-doping phenomena for the InGaAsP active layer in DH structure grown by LPE</title><title>Japanese Journal of Applied Physics</title><description>The behavior of diffused Zn and Te impurities in the InGaAsP-InP DH laser structure grown by LPE has been investigated by means of secondary ion mass spectrometry (SIMS) and photoluminescence (PL) technique. Judging from SIMS profiles of these impurities in the InGaAsP active layer, we have found that a mutual diffusion occurs in this layer and that these impurities at the heterointerface pile up. The study of PL measurements has further shown that the diffused impurities influence the optical properties of the active layer.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physical properties of thin films, nonelectronic</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1984</creationdate><recordtype>article</recordtype><recordid>eNo9kLtOwzAARS0EEqWw8QEeGEnx2_UYlT4VqR1gjhw_2lSpE9kJqH9PURHT1ZXOvcMB4BmjCcaMvh2PupsQOmkkQjdghCmTGUOC34IRQgRnTBFyDx5SOl6q4AyPwDYf-jazbVeHPewOLrQnFzT0bYT9wcF1WOo87aA2ff3lYKPPLsI6wPcVTH0cTD9EB_ex_Q6wOsNiN38Ed143yT395Rh8LuYfs1VWbJfrWV5khnLZZ4x5IZzySnAhNCdoyjmhikjFvKossaYiCE2pRdJ4pWXlLJHWsqkkwtuK0TF4vf6a2KYUnS-7WJ90PJcYlb8yys0m35WElsVFxgV_ueKdTkY3Pupg6vS_UQQprDj9AXwbXkA</recordid><startdate>19840101</startdate><enddate>19840101</enddate><creator>SASAI, Y</creator><creator>YOSHIOKA, Y</creator><creator>HASE, N</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19840101</creationdate><title>Auto-doping phenomena for the InGaAsP active layer in DH structure grown by LPE</title><author>SASAI, Y ; YOSHIOKA, Y ; HASE, N</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c357t-44f66e9f96566a5208552392794f9bd2dcb20083d07cf9a7bed27dd48726fdb43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1984</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physical properties of thin films, nonelectronic</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SASAI, Y</creatorcontrib><creatorcontrib>YOSHIOKA, Y</creatorcontrib><creatorcontrib>HASE, N</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SASAI, Y</au><au>YOSHIOKA, Y</au><au>HASE, N</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Auto-doping phenomena for the InGaAsP active layer in DH structure grown by LPE</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1984-01-01</date><risdate>1984</risdate><volume>23</volume><issue>9</issue><spage>L700</spage><epage>L702</epage><pages>L700-L702</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>The behavior of diffused Zn and Te impurities in the InGaAsP-InP DH laser structure grown by LPE has been investigated by means of secondary ion mass spectrometry (SIMS) and photoluminescence (PL) technique. Judging from SIMS profiles of these impurities in the InGaAsP active layer, we have found that a mutual diffusion occurs in this layer and that these impurities at the heterointerface pile up. The study of PL measurements has further shown that the diffused impurities influence the optical properties of the active layer.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.23.l700</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 1984-01, Vol.23 (9), p.L700-L702
issn 0021-4922
1347-4065
language eng
recordid cdi_crossref_primary_10_1143_JJAP_23_L700
source Institute of Physics Journals
subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physical properties of thin films, nonelectronic
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
title Auto-doping phenomena for the InGaAsP active layer in DH structure grown by LPE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T21%3A53%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Auto-doping%20phenomena%20for%20the%20InGaAsP%20active%20layer%20in%20DH%20structure%20grown%20by%20LPE&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=SASAI,%20Y&rft.date=1984-01-01&rft.volume=23&rft.issue=9&rft.spage=L700&rft.epage=L702&rft.pages=L700-L702&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/jjap.23.l700&rft_dat=%3Cpascalfrancis_cross%3E9209195%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true