Auto-doping phenomena for the InGaAsP active layer in DH structure grown by LPE

The behavior of diffused Zn and Te impurities in the InGaAsP-InP DH laser structure grown by LPE has been investigated by means of secondary ion mass spectrometry (SIMS) and photoluminescence (PL) technique. Judging from SIMS profiles of these impurities in the InGaAsP active layer, we have found that a mutual diffusion occurs in this layer and that these impurities at the heterointerface pile up. The study of PL measurements has further shown that the diffused impurities influence the optical properties of the active layer.