A study of silicon transistor-tip by electron-acoustic microscopy

Recent studies demonstrated the usefulness of electron-acoustic microscopy EAM to obtain internal information of specimens by an acoustic signal excited by an electron beam. Using an Si Tr-tip as a specimen, various modes of SEM and electron acoustic image EAI of EAM were observed in situ at the sam...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 1984-01, Vol.23 (9), p.L680-L682
1. Verfasser: TAKENOSHITA, H
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Recent studies demonstrated the usefulness of electron-acoustic microscopy EAM to obtain internal information of specimens by an acoustic signal excited by an electron beam. Using an Si Tr-tip as a specimen, various modes of SEM and electron acoustic image EAI of EAM were observed in situ at the same areas. Observation of EBIC images and EAI under varying bias applied to the specimen indicated that the relationship in the contrast changes between EBIC images and EAI. This suggests that the EBIC signal plays a part in generation of the acoustic signal.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.23.l680