Contact resistance of Al/Si ohmic electrodes formed by rapid lamp sintering
Reduction of contact resistance was achieved in Al/Si ohmic electrodes sintered by halogen lamp rapid heating. Contact resistance measurements were made for the electrodes formed on highly doped shallow p -Si layers, where lamp sintering was performed at 450°C. The contact resistance was low and uni...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1983-06, Vol.22 (6), p.340-342 |
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| container_end_page | 342 |
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| container_issue | 6 |
| container_start_page | 340 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 22 |
| creator | HARA, T SUZUKI, H FURUKAWA, M AMEMIYA, K |
| description | Reduction of contact resistance was achieved in Al/Si ohmic electrodes sintered by halogen lamp rapid heating. Contact resistance measurements were made for the electrodes formed on highly doped shallow
p
-Si layers, where lamp sintering was performed at 450°C. The contact resistance was low and uniform within a wafer when compared with that for conventional furnace sintering. A specific contact resistance of 4.0×10
-6
Ohm-cm
2
was achieved for
p
+
layers. The Al spikes and Si precipitates could be markedly reduced in this short time sintering. |
| doi_str_mv | 10.1143/jjap.22.l340 |
| format | Article |
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p
-Si layers, where lamp sintering was performed at 450°C. The contact resistance was low and uniform within a wafer when compared with that for conventional furnace sintering. A specific contact resistance of 4.0×10
-6
Ohm-cm
2
was achieved for
p
+
layers. The Al spikes and Si precipitates could be markedly reduced in this short time sintering.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.22.l340</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Interfaces ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Japanese Journal of Applied Physics, 1983-06, Vol.22 (6), p.340-342</ispartof><rights>1984 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-fad024ca66ede1cc105ed267fea0f5a2140d3f3ee077024c1166df23c5cb19ba3</citedby><cites>FETCH-LOGICAL-c359t-fad024ca66ede1cc105ed267fea0f5a2140d3f3ee077024c1166df23c5cb19ba3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=9304224$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>HARA, T</creatorcontrib><creatorcontrib>SUZUKI, H</creatorcontrib><creatorcontrib>FURUKAWA, M</creatorcontrib><creatorcontrib>AMEMIYA, K</creatorcontrib><title>Contact resistance of Al/Si ohmic electrodes formed by rapid lamp sintering</title><title>Japanese Journal of Applied Physics</title><description>Reduction of contact resistance was achieved in Al/Si ohmic electrodes sintered by halogen lamp rapid heating. Contact resistance measurements were made for the electrodes formed on highly doped shallow
p
-Si layers, where lamp sintering was performed at 450°C. The contact resistance was low and uniform within a wafer when compared with that for conventional furnace sintering. A specific contact resistance of 4.0×10
-6
Ohm-cm
2
was achieved for
p
+
layers. The Al spikes and Si precipitates could be markedly reduced in this short time sintering.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Interfaces</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1983</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEYhIMoWKs3f0AOHt02eZPNssdS_KoFBfW8vJu80Sz7RbKX_nu3VDwNA88MzDB2K8VKSq3WTYPjCmDVKi3O2EIqXWRamPycLYQAmekS4JJdpdTM1uRaLtjrdugntBOPlEKasLfEB8837foj8OGnC5ZTS3aKg6PE_RA7crw-8IhjcLzFbuQp9BPF0H9fswuPbaKbP12yr8eHz-1ztn97etlu9plVeTllHp0AbdEYciStlSInB6bwhMLnCFILp7wiEkVxBKU0xnlQNre1LGtUS3Z_6rVxSCmSr8YYOoyHSorqeES1223eK4BqPx8x43cnfMRksfVxHhnSf6ZUQgNo9QslZF69</recordid><startdate>19830601</startdate><enddate>19830601</enddate><creator>HARA, T</creator><creator>SUZUKI, H</creator><creator>FURUKAWA, M</creator><creator>AMEMIYA, K</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19830601</creationdate><title>Contact resistance of Al/Si ohmic electrodes formed by rapid lamp sintering</title><author>HARA, T ; SUZUKI, H ; FURUKAWA, M ; AMEMIYA, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-fad024ca66ede1cc105ed267fea0f5a2140d3f3ee077024c1166df23c5cb19ba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1983</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Interfaces</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>HARA, T</creatorcontrib><creatorcontrib>SUZUKI, H</creatorcontrib><creatorcontrib>FURUKAWA, M</creatorcontrib><creatorcontrib>AMEMIYA, K</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>HARA, T</au><au>SUZUKI, H</au><au>FURUKAWA, M</au><au>AMEMIYA, K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Contact resistance of Al/Si ohmic electrodes formed by rapid lamp sintering</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1983-06-01</date><risdate>1983</risdate><volume>22</volume><issue>6</issue><spage>340</spage><epage>342</epage><pages>340-342</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Reduction of contact resistance was achieved in Al/Si ohmic electrodes sintered by halogen lamp rapid heating. Contact resistance measurements were made for the electrodes formed on highly doped shallow
p
-Si layers, where lamp sintering was performed at 450°C. The contact resistance was low and uniform within a wafer when compared with that for conventional furnace sintering. A specific contact resistance of 4.0×10
-6
Ohm-cm
2
was achieved for
p
+
layers. The Al spikes and Si precipitates could be markedly reduced in this short time sintering.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.22.l340</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1983-06, Vol.22 (6), p.340-342 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_22_L340 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Contact resistance of Al/Si ohmic electrodes formed by rapid lamp sintering |
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