Contact resistance of Al/Si ohmic electrodes formed by rapid lamp sintering

Reduction of contact resistance was achieved in Al/Si ohmic electrodes sintered by halogen lamp rapid heating. Contact resistance measurements were made for the electrodes formed on highly doped shallow p -Si layers, where lamp sintering was performed at 450°C. The contact resistance was low and uniform within a wafer when compared with that for conventional furnace sintering. A specific contact resistance of 4.0×10 -6 Ohm-cm 2 was achieved for p + layers. The Al spikes and Si precipitates could be markedly reduced in this short time sintering.