Lattice bending in LEC-grown semi-insulating GaAs wafers

Lattice bending in LEC-grown semi-insulating GaAs wafers

Lattice bending in LEC-grown semi-insulating GaAs crystal wafers was investigated by X-ray diffraction. Various distributions in the lattice bending were observed in wafers from different boules. Prominent bends, with radii of curvature of about 20 m, were observed at places where the relevant topog...

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Veröffentlicht in:Japanese Journal of Applied Physics 1983-10, Vol.22 (10), p.1567-1569
Hauptverfasser: YASUAMI, S, MIKAMI, H, HOJO, A
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Zusammenfassung:Lattice bending in LEC-grown semi-insulating GaAs crystal wafers was investigated by X-ray diffraction. Various distributions in the lattice bending were observed in wafers from different boules. Prominent bends, with radii of curvature of about 20 m, were observed at places where the relevant topographs showed the presence of fine cellular dislocation networks. The apparent wafer bending was also examined optically and was found to be caused mainly by back surface damage.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.22.1567