Chemical Shifts of Photoelectron and Auger Lines in Ag- or Cu-Doped Amorphous GeSe 2 and As 2 Se 3

Chemical shifts of the Ag 3d 5/2,3/2 , Cu 2p 3/2,1/2 , Ge 3d, 3p 3/2,1/2 , As 3d, 3p 3/2,1/2 , and Se 3d, 3p 3/2,1/2 , photoelectron lines, and the AgM 4,5 N 45 N 45 , GeL 3 M 45 M 45 and CuL 3 M 45 M 45 Auger lines are measured for Ag and Cu films, and amorphous films of Ge, As, Se, GeSe 2 , As 2 Se 3 , Ag-doped GeSe 2 , Ag-doped As 2 Se 3 and Cu-doped As 2 Se 3 . The chemical shifts of Ge, Ag and Cu photoelectron lines are corrected for by an extra-atomic relaxation energy obtained from the chemical shifts of Ge, Ag and Cu Auger lines. These results are explained for in view of the electronegativity scales. The chemical shifts in Ag-doped GeSe 2 are treated in accordance with the valence shell potential model; Ag–Se and Ge–Se bonds are attributed to covalent bonds rather than ionic bonds in terms of the amounts of ionic character and the electronegativity differences.