A Study of Electron Mobility and Electron-Phonon Interaction in Si MOSFETs by Negative Magnetoresistance Experiments
Hot-electron effect in Si(001) MOSFET's has been studied at 4.2 K and 1.1 K by use of negative magnetoresistance as a thermometer for electron temperature. Heat transfer from electron system to phonon system is explained by use of deformation potential constants in Si bulk. Possible ultimate el...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1982-11, Vol.21 (11A), p.L709 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Hot-electron effect in Si(001) MOSFET's has been studied at 4.2 K and 1.1 K by use of negative magnetoresistance as a thermometer for electron temperature. Heat transfer from electron system to phonon system is explained by use of deformation potential constants in Si bulk. Possible ultimate electron mobility in Si MOSFET's is discussed. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.21.L709 |