Dynamic Study of Stacking Fault Tetrahedra Induced by Electron Irradiation in Copper Crystals

The behavior of stacking fault tetrahedra (SFT) induced by electron irradiation in copper crystals has been investigated with a high-voltage electron microscope, concentrating especially on a) the growth of individual SFT, and b) the formation of linear arrays of SFT in the direction. The effects of accelerating voltage, specimen temperature and dose rate of electrons on the behavior of SFT have also been examined.