Zn Diffusion into AlGaAsSb and Its Application to APD's
Vapor-phase Zn diffusion into n-type GaSb and AlGaAsSb at temperatures of 500°C–540°C with Zn-Sb and Zn-As compounds as diffusion sources was studied. Zn diffusion was carried out with good reproducibility and flat diffusion fronts were obtained. Zn-diffused AlGaAsSb APD's were fabricated and s...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1981, Vol.20 (3), p.597 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Vapor-phase Zn diffusion into n-type GaSb and AlGaAsSb at temperatures of 500°C–540°C with Zn-Sb and Zn-As compounds as diffusion sources was studied. Zn diffusion was carried out with good reproducibility and flat diffusion fronts were obtained. Zn-diffused AlGaAsSb APD's were fabricated and small dark currents were obtained compared with those of our previously-reported grown junction APD's. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.20.597 |