InP/GaInAsP Buried Heterostructure Lasers of 1.5 µm Region

InP/GaInAsP Buried Heterostructure Lasers of 1.5 µm Region

The buried-heterostructure, in which the quaternary active layer is completely surrounded by InP crystal, has been realized in 1.5 µm region by low temperature liquid phase epitaxial growth. Low threshold current of 25 mA under CW operation was achieved at 26°C. This is the lowest value so far repor...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 1980, Vol.19 (4), p.L218
Hauptverfasser: Nagai, Haruo, Noguchi, Yoshio, Takahei, Kenichiro, Toyoshima, Yoshio, Iwane, Genzo
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The buried-heterostructure, in which the quaternary active layer is completely surrounded by InP crystal, has been realized in 1.5 µm region by low temperature liquid phase epitaxial growth. Low threshold current of 25 mA under CW operation was achieved at 26°C. This is the lowest value so far reported on the InP/GaInAsP laser in 1.5 µm wavelength region.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.19.L218