Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method

Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method

Peak shifts of electroluminescence spectra from red to blue are observed in heavily doped 6H SiC LED's with a linear and a quadratic impurity profiles prepared by the overcompensation method. The mechanism is studied based on the electrical properties, injection mechanisms, and luminescent prop...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 1980, Vol.19 (7), p.1323
Hauptverfasser: Ikeda, Mitsushi, Matsunami, Hiroyuki, Tanaka, Tetsuro
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 7
container_start_page 1323
container_title Japanese Journal of Applied Physics
container_volume 19
creator Ikeda, Mitsushi
Matsunami, Hiroyuki
Tanaka, Tetsuro
description Peak shifts of electroluminescence spectra from red to blue are observed in heavily doped 6H SiC LED's with a linear and a quadratic impurity profiles prepared by the overcompensation method. The mechanism is studied based on the electrical properties, injection mechanisms, and luminescent properties. Most of the characteristics are explained by the photon assisted tunneling model.
doi_str_mv 10.1143/JJAP.19.1323
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_19_1323</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_19_1323</sourcerecordid><originalsourceid>FETCH-LOGICAL-c315t-ae686dcac88eb7b6dda3f86c029dc901874e6b58155c6d67cfc76d116cfa89353</originalsourceid><addsrcrecordid>eNotkEtPhDAYRRujiTi68wd050awH31QlmQcHwQzJI5rUtri1MwAadFk_r0QXd3c3Jy7OAjdAkkAGH0oy6JOIE-ApvQMRUBZFjMi-DmKCEkhZnmaXqKrEL7mKjiDCJX1fpiGHhchuDBZg3fffW8Prv_Ersfvbo2rzeNdwLW3o_Lz3p7w9sd6PRxH2wc1uRl-s9N-MNfoolOHYG_-c4U-nja79UtcbZ9f10UVawp8ipUVUhittJS2zVphjKKdFJqkudE5AZkxK1ougXMtjMh0pzNhAITulMwppyt0__er_RCCt10zendU_tQAaRYPzeKhgbxZPNBfJbBQew</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Ikeda, Mitsushi ; Matsunami, Hiroyuki ; Tanaka, Tetsuro</creator><creatorcontrib>Ikeda, Mitsushi ; Matsunami, Hiroyuki ; Tanaka, Tetsuro</creatorcontrib><description>Peak shifts of electroluminescence spectra from red to blue are observed in heavily doped 6H SiC LED's with a linear and a quadratic impurity profiles prepared by the overcompensation method. The mechanism is studied based on the electrical properties, injection mechanisms, and luminescent properties. Most of the characteristics are explained by the photon assisted tunneling model.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.19.1323</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1980, Vol.19 (7), p.1323</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c315t-ae686dcac88eb7b6dda3f86c029dc901874e6b58155c6d67cfc76d116cfa89353</citedby><cites>FETCH-LOGICAL-c315t-ae686dcac88eb7b6dda3f86c029dc901874e6b58155c6d67cfc76d116cfa89353</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids></links><search><creatorcontrib>Ikeda, Mitsushi</creatorcontrib><creatorcontrib>Matsunami, Hiroyuki</creatorcontrib><creatorcontrib>Tanaka, Tetsuro</creatorcontrib><title>Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method</title><title>Japanese Journal of Applied Physics</title><description>Peak shifts of electroluminescence spectra from red to blue are observed in heavily doped 6H SiC LED's with a linear and a quadratic impurity profiles prepared by the overcompensation method. The mechanism is studied based on the electrical properties, injection mechanisms, and luminescent properties. Most of the characteristics are explained by the photon assisted tunneling model.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1980</creationdate><recordtype>article</recordtype><recordid>eNotkEtPhDAYRRujiTi68wd050awH31QlmQcHwQzJI5rUtri1MwAadFk_r0QXd3c3Jy7OAjdAkkAGH0oy6JOIE-ApvQMRUBZFjMi-DmKCEkhZnmaXqKrEL7mKjiDCJX1fpiGHhchuDBZg3fffW8Prv_Ersfvbo2rzeNdwLW3o_Lz3p7w9sd6PRxH2wc1uRl-s9N-MNfoolOHYG_-c4U-nja79UtcbZ9f10UVawp8ipUVUhittJS2zVphjKKdFJqkudE5AZkxK1ougXMtjMh0pzNhAITulMwppyt0__er_RCCt10zendU_tQAaRYPzeKhgbxZPNBfJbBQew</recordid><startdate>1980</startdate><enddate>1980</enddate><creator>Ikeda, Mitsushi</creator><creator>Matsunami, Hiroyuki</creator><creator>Tanaka, Tetsuro</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1980</creationdate><title>Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method</title><author>Ikeda, Mitsushi ; Matsunami, Hiroyuki ; Tanaka, Tetsuro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c315t-ae686dcac88eb7b6dda3f86c029dc901874e6b58155c6d67cfc76d116cfa89353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1980</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ikeda, Mitsushi</creatorcontrib><creatorcontrib>Matsunami, Hiroyuki</creatorcontrib><creatorcontrib>Tanaka, Tetsuro</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ikeda, Mitsushi</au><au>Matsunami, Hiroyuki</au><au>Tanaka, Tetsuro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1980</date><risdate>1980</risdate><volume>19</volume><issue>7</issue><spage>1323</spage><pages>1323-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Peak shifts of electroluminescence spectra from red to blue are observed in heavily doped 6H SiC LED's with a linear and a quadratic impurity profiles prepared by the overcompensation method. The mechanism is studied based on the electrical properties, injection mechanisms, and luminescent properties. Most of the characteristics are explained by the photon assisted tunneling model.</abstract><doi>10.1143/JJAP.19.1323</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 1980, Vol.19 (7), p.1323
issn 0021-4922
1347-4065
language eng
recordid cdi_crossref_primary_10_1143_JJAP_19_1323
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T08%3A07%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photon%20Assisted%20Tunneling%20in%20SiC%20LED's%20Prepared%20by%20Overcompensation%20Method&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Ikeda,%20Mitsushi&rft.date=1980&rft.volume=19&rft.issue=7&rft.spage=1323&rft.pages=1323-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.19.1323&rft_dat=%3Ccrossref%3E10_1143_JJAP_19_1323%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true