Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method

Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method

Peak shifts of electroluminescence spectra from red to blue are observed in heavily doped 6H SiC LED's with a linear and a quadratic impurity profiles prepared by the overcompensation method. The mechanism is studied based on the electrical properties, injection mechanisms, and luminescent prop...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 1980, Vol.19 (7), p.1323
Hauptverfasser: Ikeda, Mitsushi, Matsunami, Hiroyuki, Tanaka, Tetsuro
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Peak shifts of electroluminescence spectra from red to blue are observed in heavily doped 6H SiC LED's with a linear and a quadratic impurity profiles prepared by the overcompensation method. The mechanism is studied based on the electrical properties, injection mechanisms, and luminescent properties. Most of the characteristics are explained by the photon assisted tunneling model.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.19.1323