Electrical and Optical Properties of GaSe

Electrical and Optical Properties of GaSe

Absorption, photoconductivity, resistivity, and Hall coefficient of GaSe are measured. The photoconductivity spectrum reflects the exciton absortion. The crystal is p -type with two activation energies, of which value is about 0.26 eV above 200°K and 0.12 eV below 200°K for one specimen. Temperature...

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Veröffentlicht in:Japanese Journal of Applied Physics 1971-01, Vol.10 (12), p.1698
Hauptverfasser: Tatsuyama, Chiei, Hamaguchi, Chihiro, Tomita, Hiroshi, Nakai, Junkichi
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container_issue 12
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container_title Japanese Journal of Applied Physics
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creator Tatsuyama, Chiei
Hamaguchi, Chihiro
Tomita, Hiroshi
Nakai, Junkichi
description Absorption, photoconductivity, resistivity, and Hall coefficient of GaSe are measured. The photoconductivity spectrum reflects the exciton absortion. The crystal is p -type with two activation energies, of which value is about 0.26 eV above 200°K and 0.12 eV below 200°K for one specimen. Temperature dependence of the mobility is given by µ∝ T - n , where n is about 2. Ratio of the resistivity perpendicular to the layers to parallel one is about 10∼50. The activation energy almost equal for both orientations. Electric field dependence of the conductivity perpendicular to the layers is explained by an “anomalous” Poole-Frenkel effect. Estimated dielectric constant is ε =5.7 at 293°K and 6.6 at 102°K.
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