Electrical and Optical Properties of GaSe
Absorption, photoconductivity, resistivity, and Hall coefficient of GaSe are measured. The photoconductivity spectrum reflects the exciton absortion. The crystal is p -type with two activation energies, of which value is about 0.26 eV above 200°K and 0.12 eV below 200°K for one specimen. Temperature...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1971-01, Vol.10 (12), p.1698 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Absorption, photoconductivity, resistivity, and Hall coefficient of GaSe are measured. The photoconductivity spectrum reflects the exciton absortion. The crystal is
p
-type with two activation energies, of which value is about 0.26 eV above 200°K and 0.12 eV below 200°K for one specimen. Temperature dependence of the mobility is given by µ∝
T
-
n
, where
n
is about 2. Ratio of the resistivity perpendicular to the layers to parallel one is about 10∼50. The activation energy almost equal for both orientations. Electric field dependence of the conductivity perpendicular to the layers is explained by an “anomalous” Poole-Frenkel effect. Estimated dielectric constant is
ε
=5.7 at 293°K and 6.6 at 102°K. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.10.1698 |