High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm

Continuous-wave operation of InGaN green laser diodes (LDs) on semipolar $\{20\bar{2}1\}$ GaN substrates with output powers of over 100 mW in the spectral region beyond 530 nm is demonstrated. Wall plug efficiencies (WPEs) as high as 7.0--8.9% are realized in the wavelength range of 525--532 nm, which exceed those reported for $c$-plane LDs. The longest lasing wavelength has reached 536.6 nm under cw operation. These results suggest that the InGaN green LDs on the $\{20\bar{2}1\}$ plane are better suited as light sources for applications requiring wavelengths over 525 nm.