AlGaN/GaN-on-Silicon Metal–Oxide–Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 m$\Omega$$\cdot$cm$^{2}$ Using a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process
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| Veröffentlicht in: | Applied physics express 2012-06, Vol.5 (6), p.66501 |
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| container_issue | 6 |
| container_start_page | 66501 |
| container_title | Applied physics express |
| container_volume | 5 |
| creator | Liu, Xinke Zhan, Chunlei Chan, Kwok Wai Liu, Wei Tan, Leng Seow Chen, Kevin Jing Yeo, Yee-Chia |
| description | |
| doi_str_mv | 10.1143/APEX.5.066501 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1882-0778 |
| ispartof | Applied physics express, 2012-06, Vol.5 (6), p.66501 |
| issn | 1882-0778 1882-0786 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_APEX_5_066501 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | AlGaN/GaN-on-Silicon Metal–Oxide–Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 m$\Omega$$\cdot$cm$^{2}$ Using a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process |
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