High Efficiency Hydrogenated Nanocrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cells Using an Optimized Buffer Layer

Heterojunction crystalline silicon solar cells using a nanocrystalline cubic silicon carbide (nc-3C-SiC) emitter were optimized by changing the deposition time of a buffer layer. The implied open circuit voltage ( implied -$V_{\text{oc}}$) estimated from quasi-steady state photoconductance measurements strongly depended on the buffer deposition time. The implied -$V_{\text{oc}}$ of 0.690 V was achieved with a buffer deposition time of 30 s. The optimized solar cell showed an active area efficiency of 19.1% ($V_{\text{oc}}=0.680$ V, $J_{\text{sc}}=36.6$ mA/cm 2 , and $\mathit{FF}=0.769$). The excellent cell performance is a direct evidence of the potential of the nc-3C-SiC:H emitter.