Enhanced Carrier Injection in Perovskite Field-Effect Transistors via Low-Barrier Contacts

The effects of the source--drain contact metal on carrier injection to undoped KTaO 3 and SrTiO 3 -channel field-effect transistors (FETs) were investigated. By using Al alloys (Al--Zn and Al--Sr) or Zn as contacts, the magnitude of channel current was significantly enhanced both at room temperature and at a low temperature (10 K). Moreover, the yield of KTaO 3 -FETs showing carrier injection at 10 K improves dramatically with the use of Zn-containing metals combined with a current-induced forming step carried out at 300 K.