Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics express 2010-12, Vol.3 (12), p.121001
Hauptverfasser: Adachi, Masahiro, Yoshizumi, Yusuke, Enya, Yohei, Kyono, Takashi, Sumitomo, Takamichi, Tokuyama, Shinji, Takagi, Shinpei, Sumiyoshi, Kazuhide, Saga, Nobuhiro, Ikegami, Takatoshi, Ueno, Masaki, Katayama, Koji, Nakamura, Takao
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 12
container_start_page 121001
container_title Applied physics express
container_volume 3
creator Adachi, Masahiro
Yoshizumi, Yusuke
Enya, Yohei
Kyono, Takashi
Sumitomo, Takamichi
Tokuyama, Shinji
Takagi, Shinpei
Sumiyoshi, Kazuhide
Saga, Nobuhiro
Ikegami, Takatoshi
Ueno, Masaki
Katayama, Koji
Nakamura, Takao
description
doi_str_mv 10.1143/APEX.3.121001
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_APEX_3_121001</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_APEX_3_121001</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2181-cf66d123921d1c323b876f5b44464eb9585dc44357cd02b02301f502afe69d0e3</originalsourceid><addsrcrecordid>eNo9kMFKw0AURQdRsFaX7t8PpL43M5mky9rWWghaaAUXQphkJjbSTmQmRYqI_oN_6JfYUnF1L9zLWRzGLgl7RFJcDWbjx57oESdEOmIdSlMeYZKq4_-epKfsLIQXRCUFqQ77zJo3WCy9DctmZWC48d66FkbWhbrdwtRN9B1c62ANxBx_vr5jgeDWMPHWOsh2g4dR3RgboHEwt-s6mjUr7eGd41OhPacPuNl9o3mrnandM-yB800RWq9bG87ZSaVXwV78ZZc93IwXw9sou59Mh4MsKjmlFJWVUoa46HMyVAouijRRVVxIKZW0RT9OY1NKKeKkNMgL5AKpipHryqq-QSu6LDpwS9-E4G2Vv_p6rf02J8z39vK9vVzkB3viF1EYYRM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Adachi, Masahiro ; Yoshizumi, Yusuke ; Enya, Yohei ; Kyono, Takashi ; Sumitomo, Takamichi ; Tokuyama, Shinji ; Takagi, Shinpei ; Sumiyoshi, Kazuhide ; Saga, Nobuhiro ; Ikegami, Takatoshi ; Ueno, Masaki ; Katayama, Koji ; Nakamura, Takao</creator><creatorcontrib>Adachi, Masahiro ; Yoshizumi, Yusuke ; Enya, Yohei ; Kyono, Takashi ; Sumitomo, Takamichi ; Tokuyama, Shinji ; Takagi, Shinpei ; Sumiyoshi, Kazuhide ; Saga, Nobuhiro ; Ikegami, Takatoshi ; Ueno, Masaki ; Katayama, Koji ; Nakamura, Takao</creatorcontrib><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.1143/APEX.3.121001</identifier><language>eng</language><ispartof>Applied physics express, 2010-12, Vol.3 (12), p.121001</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2181-cf66d123921d1c323b876f5b44464eb9585dc44357cd02b02301f502afe69d0e3</citedby><cites>FETCH-LOGICAL-c2181-cf66d123921d1c323b876f5b44464eb9585dc44357cd02b02301f502afe69d0e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Adachi, Masahiro</creatorcontrib><creatorcontrib>Yoshizumi, Yusuke</creatorcontrib><creatorcontrib>Enya, Yohei</creatorcontrib><creatorcontrib>Kyono, Takashi</creatorcontrib><creatorcontrib>Sumitomo, Takamichi</creatorcontrib><creatorcontrib>Tokuyama, Shinji</creatorcontrib><creatorcontrib>Takagi, Shinpei</creatorcontrib><creatorcontrib>Sumiyoshi, Kazuhide</creatorcontrib><creatorcontrib>Saga, Nobuhiro</creatorcontrib><creatorcontrib>Ikegami, Takatoshi</creatorcontrib><creatorcontrib>Ueno, Masaki</creatorcontrib><creatorcontrib>Katayama, Koji</creatorcontrib><creatorcontrib>Nakamura, Takao</creatorcontrib><title>Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates</title><title>Applied physics express</title><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNo9kMFKw0AURQdRsFaX7t8PpL43M5mky9rWWghaaAUXQphkJjbSTmQmRYqI_oN_6JfYUnF1L9zLWRzGLgl7RFJcDWbjx57oESdEOmIdSlMeYZKq4_-epKfsLIQXRCUFqQ77zJo3WCy9DctmZWC48d66FkbWhbrdwtRN9B1c62ANxBx_vr5jgeDWMPHWOsh2g4dR3RgboHEwt-s6mjUr7eGd41OhPacPuNl9o3mrnandM-yB800RWq9bG87ZSaVXwV78ZZc93IwXw9sou59Mh4MsKjmlFJWVUoa46HMyVAouijRRVVxIKZW0RT9OY1NKKeKkNMgL5AKpipHryqq-QSu6LDpwS9-E4G2Vv_p6rf02J8z39vK9vVzkB3viF1EYYRM</recordid><startdate>201012</startdate><enddate>201012</enddate><creator>Adachi, Masahiro</creator><creator>Yoshizumi, Yusuke</creator><creator>Enya, Yohei</creator><creator>Kyono, Takashi</creator><creator>Sumitomo, Takamichi</creator><creator>Tokuyama, Shinji</creator><creator>Takagi, Shinpei</creator><creator>Sumiyoshi, Kazuhide</creator><creator>Saga, Nobuhiro</creator><creator>Ikegami, Takatoshi</creator><creator>Ueno, Masaki</creator><creator>Katayama, Koji</creator><creator>Nakamura, Takao</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201012</creationdate><title>Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates</title><author>Adachi, Masahiro ; Yoshizumi, Yusuke ; Enya, Yohei ; Kyono, Takashi ; Sumitomo, Takamichi ; Tokuyama, Shinji ; Takagi, Shinpei ; Sumiyoshi, Kazuhide ; Saga, Nobuhiro ; Ikegami, Takatoshi ; Ueno, Masaki ; Katayama, Koji ; Nakamura, Takao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2181-cf66d123921d1c323b876f5b44464eb9585dc44357cd02b02301f502afe69d0e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Adachi, Masahiro</creatorcontrib><creatorcontrib>Yoshizumi, Yusuke</creatorcontrib><creatorcontrib>Enya, Yohei</creatorcontrib><creatorcontrib>Kyono, Takashi</creatorcontrib><creatorcontrib>Sumitomo, Takamichi</creatorcontrib><creatorcontrib>Tokuyama, Shinji</creatorcontrib><creatorcontrib>Takagi, Shinpei</creatorcontrib><creatorcontrib>Sumiyoshi, Kazuhide</creatorcontrib><creatorcontrib>Saga, Nobuhiro</creatorcontrib><creatorcontrib>Ikegami, Takatoshi</creatorcontrib><creatorcontrib>Ueno, Masaki</creatorcontrib><creatorcontrib>Katayama, Koji</creatorcontrib><creatorcontrib>Nakamura, Takao</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Adachi, Masahiro</au><au>Yoshizumi, Yusuke</au><au>Enya, Yohei</au><au>Kyono, Takashi</au><au>Sumitomo, Takamichi</au><au>Tokuyama, Shinji</au><au>Takagi, Shinpei</au><au>Sumiyoshi, Kazuhide</au><au>Saga, Nobuhiro</au><au>Ikegami, Takatoshi</au><au>Ueno, Masaki</au><au>Katayama, Koji</au><au>Nakamura, Takao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates</atitle><jtitle>Applied physics express</jtitle><date>2010-12</date><risdate>2010</risdate><volume>3</volume><issue>12</issue><spage>121001</spage><pages>121001-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><doi>10.1143/APEX.3.121001</doi></addata></record>
fulltext fulltext
identifier ISSN: 1882-0778
ispartof Applied physics express, 2010-12, Vol.3 (12), p.121001
issn 1882-0778
1882-0786
language eng
recordid cdi_crossref_primary_10_1143_APEX_3_121001
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T18%3A13%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low%20Threshold%20Current%20Density%20InGaN%20Based%20520%E2%80%93530%20nm%20Green%20Laser%20Diodes%20on%20Semi-Polar%20%7B20%5Cbar21%7D%20Free-Standing%20GaN%20Substrates&rft.jtitle=Applied%20physics%20express&rft.au=Adachi,%20Masahiro&rft.date=2010-12&rft.volume=3&rft.issue=12&rft.spage=121001&rft.pages=121001-&rft.issn=1882-0778&rft.eissn=1882-0786&rft_id=info:doi/10.1143/APEX.3.121001&rft_dat=%3Ccrossref%3E10_1143_APEX_3_121001%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true