545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density
We report the growth of BeZnCdSe quantum-well laser diode (LD) structures with a short-period superlattice cladding layer and demonstrate continuous-wave lasing in the pure-green spectral region (545 nm) at room temperature. The threshold current density and voltage of a 5-μm-wide gain-guided laser...
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Veröffentlicht in: | Applied physics express 2010-09, Vol.3 (9), p.091201-091201-3 |
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container_title | Applied physics express |
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creator | Kasai, Jun-ichi Akimoto, Ryouichi Kuwatsuka, Haruhiko Hasama, Toshifumi Ishikawa, Hiroshi Fujisaki, Sumiko Kikawa, Takeshi Tanaka, Sigehisa Tsuji, Shinji Nakajima, Hiroshi Tasai, Kunihiko Takiguchi, Yoshiro Asatsuma, Tsunenori Tamamura, Koshi |
description | We report the growth of BeZnCdSe quantum-well laser diode (LD) structures with a short-period superlattice cladding layer and demonstrate continuous-wave lasing in the pure-green spectral region (545 nm) at room temperature. The threshold current density and voltage of a 5-μm-wide gain-guided laser were found to be 1.7 kA/cm 2 and 10.4 V, respectively. This threshold current density is sufficiently low compared with that of InGaN/GaN green LDs. |
doi_str_mv | 10.1143/APEX.3.091201 |
format | Article |
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The threshold current density and voltage of a 5-μm-wide gain-guided laser were found to be 1.7 kA/cm 2 and 10.4 V, respectively. 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The threshold current density and voltage of a 5-μm-wide gain-guided laser were found to be 1.7 kA/cm 2 and 10.4 V, respectively. This threshold current density is sufficiently low compared with that of InGaN/GaN green LDs.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.1143/APEX.3.091201</doi></addata></record> |
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title | 545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density |
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