545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density

We report the growth of BeZnCdSe quantum-well laser diode (LD) structures with a short-period superlattice cladding layer and demonstrate continuous-wave lasing in the pure-green spectral region (545 nm) at room temperature. The threshold current density and voltage of a 5-μm-wide gain-guided laser...

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Veröffentlicht in:	Applied physics express 2010-09, Vol.3 (9), p.091201-091201-3
Hauptverfasser:	Kasai, Jun-ichi, Akimoto, Ryouichi, Kuwatsuka, Haruhiko, Hasama, Toshifumi, Ishikawa, Hiroshi, Fujisaki, Sumiko, Kikawa, Takeshi, Tanaka, Sigehisa, Tsuji, Shinji, Nakajima, Hiroshi, Tasai, Kunihiko, Takiguchi, Yoshiro, Asatsuma, Tsunenori, Tamamura, Koshi
Format:	Artikel
Sprache:	eng
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Zusammenfassung:	We report the growth of BeZnCdSe quantum-well laser diode (LD) structures with a short-period superlattice cladding layer and demonstrate continuous-wave lasing in the pure-green spectral region (545 nm) at room temperature. The threshold current density and voltage of a 5-μm-wide gain-guided laser were found to be 1.7 kA/cm 2 and 10.4 V, respectively. This threshold current density is sufficiently low compared with that of InGaN/GaN green LDs.
ISSN:	1882-0778 1882-0786
DOI:	10.1143/APEX.3.091201