Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy

Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy

GaInN films with different In compositions were grown using a raised-pressure metalorganic vapor phase epitaxy (MOVPE) system operated from 100 to 200 kPa. A precise X-ray diffraction study showed that the In composition increases with an increasing pressure during growth, which is consistent with t...

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Veröffentlicht in:Applied physics express 2010-07, Vol.3 (7), p.075601-075601-2
Hauptverfasser: Iida, Daisuke, Nagata, Kensuke, Makino, Takafumi, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Bandoh, Akira, Udagawa, Takashi
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Sprache:eng
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Zusammenfassung:GaInN films with different In compositions were grown using a raised-pressure metalorganic vapor phase epitaxy (MOVPE) system operated from 100 to 200 kPa. A precise X-ray diffraction study showed that the In composition increases with an increasing pressure during growth, which is consistent with the result of a thermodynamic analysis.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.3.075601