Improvement of InGaZnO 4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing

Improvement of InGaZnO 4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing

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Veröffentlicht in:Applied physics express 2009-02, Vol.2, p.21102
Hauptverfasser: Nakata, Mitsuru, Takechi, Kazushige, Azuma, Kazufumi, Tokumitsu, Eisuke, Yamaguchi, Hirotaka, Kaneko, Setsuo
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container_title Applied physics express
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creator Nakata, Mitsuru
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Azuma, Kazufumi
Tokumitsu, Eisuke
Yamaguchi, Hirotaka
Kaneko, Setsuo
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doi_str_mv 10.1143/APEX.2.021102
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Improvement of InGaZnO 4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing
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