Formation of Ultra-low Density (≤10 4 cm -2 ) Self-Organized InAs Quantum Dots on GaAs by a Modified Molecular Beam Epitaxy Method
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Veröffentlicht in: | Applied physics express 2008-06, Vol.1, p.61202 |
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container_title | Applied physics express |
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creator | Ohmori, Masato Kawazu, Takuya Torii, Kousuke Takahashi, Takuji Sakaki, Hiroyuki |
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doi_str_mv | 10.1143/APEX.1.061202 |
format | Article |
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source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
title | Formation of Ultra-low Density (≤10 4 cm -2 ) Self-Organized InAs Quantum Dots on GaAs by a Modified Molecular Beam Epitaxy Method |
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