Conductivity of structures with silicon nanocrystals in oxide matrix

The current-voltage characteristics and temperature dependences of conductivity (in the temperature range from 210 to 330 K) of the structures containing silicon nanocrystals in the SiO 2 matrix have been measured. Samples with various numbers of layers and nanocrystal sizes have been investigated....

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Nanotechnologies in Russia 2011-02, Vol.6 (1-2), p.125-129
Hauptverfasser:	Forsh, P. A., Gavrilyuk, A. S., Forsh, E. A., Zhigunov, D. M., Martyshov, M. N., Antonovskii, A. A., Sysoev, I. D., Vorontsov, A. S., Kashkarov, P. K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Industrial and Production Engineering Machines Manufacturing Materials Science Nanotechnology Processes
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The current-voltage characteristics and temperature dependences of conductivity (in the temperature range from 210 to 330 K) of the structures containing silicon nanocrystals in the SiO 2 matrix have been measured. Samples with various numbers of layers and nanocrystal sizes have been investigated. Based on the results, possible mechanisms of the charge carrier transfer in the studied structures at different temperatures have been analyzed.
ISSN:	1995-0780 1995-0799
DOI:	10.1134/S1995078011010046