A broadband dielectric spectroscopy study of the relaxation properties of H-Beta-ZnS zeolite-semiconductor nanocomposite

Broadband dielectric spectroscopy was used to determine the dependences of the complex permittivity for H-Beta zeolite and H-Beta-ZnS composite in a frequency range of 10 −1 −10 5 Hz and a temperature range from −160 to +300°C. A difference in the dispersion of the real and imaginary parts of the pe...

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Veröffentlicht in:Nanotechnologies in Russia 2009-06, Vol.4 (5-6), p.290-295
Hauptverfasser: Voilov, D. N., Novikov, G. F., Meteleva-Fisher, Yu. V.
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Sprache:eng
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Zusammenfassung:Broadband dielectric spectroscopy was used to determine the dependences of the complex permittivity for H-Beta zeolite and H-Beta-ZnS composite in a frequency range of 10 −1 −10 5 Hz and a temperature range from −160 to +300°C. A difference in the dispersion of the real and imaginary parts of the permittivity of H-Beta-ZnS nanocomposite in comparison with initial zeolite was detected. Approximating the dielectric spectrum by the Havriliak-Negami functions made it possible to obtain the distribution of dielectric relaxation times, which contained several maxima corresponding to the relaxation transitions in both nanocomposite and initial zeolite. A new relaxation transition was observed in the nanocomposite in a temperature range of 170–230°C. The temperature dependence of the relaxation time of this transition was linearized in the Arrhenius coordinates with an activation energy of ∼2.0 eV.
ISSN:1995-0780
1995-0799
DOI:10.1134/S199507800905005X