Experimental determination of the top of the valence band in amorphous Al2O3 and γ-Al2O3
—Investigation of the energy distribution of occupied states in the valence band and determination of its upper level in films of amorphous Al 2 O 3 and γ-Al 2 O 3 , synthesized by atomic layer deposition on a silicon substrate, was performed by X-ray photoelectron spectroscopy. The top of the valen...
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| Veröffentlicht in: | Technical physics letters 2015-10, Vol.41 (10), p.922-925 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | —Investigation of the energy distribution of occupied states in the valence band and determination of its upper level in films of amorphous Al
2
O
3
and γ-Al
2
O
3
, synthesized by atomic layer deposition on a silicon substrate, was performed by X-ray photoelectron spectroscopy. The top of the valence gap in γ-Al
2
O
3
was found to shift by 0.8 eV towards larger electron binding energies with respect to amorphous Al
2
O
3
. |
|---|---|
| ISSN: | 1063-7850 1090-6533 |
| DOI: | 10.1134/S1063785015100077 |