Growth of bulk AlN crystals by vapor-phase epitaxy from atomic Al and NH3
A new approach to obtaining bulk AlN single crystals by vapor-phase epitaxy has been tested. NH 3 and Al vapor were used as growth reagents. The following ranges of growth parameters were admissible for the laboratory equipment (experimental growth installation): temperatures of 1050–1500°C at ammon...
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Veröffentlicht in: | Technical physics letters 2015-09, Vol.41 (9), p.854-858 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A new approach to obtaining bulk AlN single crystals by vapor-phase epitaxy has been tested. NH
3
and Al vapor were used as growth reagents. The following ranges of growth parameters were admissible for the laboratory equipment (experimental growth installation): temperatures of 1050–1500°C at ammonia flow rates of up to 50 sccm and pressures on the order of 10
–5
–10
–4
bar, growth rates of up to 200 μm h
–1
. At a temperature of 1450°C, samples of strained bulk block AlN crystals with thicknesses of up to 200 μm were obtained in the wurtzite phase in the [0001] direction on MBE templates based on sapphire substrates with a diameter of 2″. |
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ISSN: | 1063-7850 1090-6533 |
DOI: | 10.1134/S1063785015090084 |