Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon
It has been experimentally demonstrated that compensated silicon doped with manganese by diffusion at a low temperature exhibits anomalously high negative magnetoresistance (MR). It is established that the negative MR magnitude in this material can be controlled by varying the temperature, illuminat...
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| Veröffentlicht in: | Technical physics letters 2010-08, Vol.36 (8), p.741-744 |
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| container_end_page | 744 |
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| container_issue | 8 |
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| container_title | Technical physics letters |
| container_volume | 36 |
| creator | Bakhadyrkhanov, M. K. Ayupov, K. S. Iliev, Kh. M. Mavlonov, G. Kh Sattorov, O. É. |
| description | It has been experimentally demonstrated that compensated silicon doped with manganese by diffusion at a low temperature exhibits anomalously high negative magnetoresistance (MR). It is established that the negative MR magnitude in this material can be controlled by varying the temperature, illumination, and the external electric and magnetic fields. |
| doi_str_mv | 10.1134/S1063785010080195 |
| format | Article |
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| ispartof | Technical physics letters, 2010-08, Vol.36 (8), p.741-744 |
| issn | 1063-7850 1090-6533 |
| language | eng |
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| subjects | Classical and Continuum Physics Physics Physics and Astronomy |
| title | Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon |
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