Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon

Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon

It has been experimentally demonstrated that compensated silicon doped with manganese by diffusion at a low temperature exhibits anomalously high negative magnetoresistance (MR). It is established that the negative MR magnitude in this material can be controlled by varying the temperature, illuminat...

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Veröffentlicht in:Technical physics letters 2010-08, Vol.36 (8), p.741-744
Hauptverfasser: Bakhadyrkhanov, M. K., Ayupov, K. S., Iliev, Kh. M., Mavlonov, G. Kh, Sattorov, O. É.
Format: Artikel
Sprache:eng
Schlagworte:
Classical and Continuum Physics
Physics
Physics and Astronomy
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Zusammenfassung:It has been experimentally demonstrated that compensated silicon doped with manganese by diffusion at a low temperature exhibits anomalously high negative magnetoresistance (MR). It is established that the negative MR magnitude in this material can be controlled by varying the temperature, illumination, and the external electric and magnetic fields.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785010080195