Morphology of porous silicon under long anodic etching in electrolyte with internal current source

The results of electron microscopy investigation of morphology of porous silicon (PS) received under long anodic etching by using internal current source in electrolytes such as HF:H 2 O 2 :H 2 C 5 OH and HF:H 2 O 2 are presented. Mosaic structure of nanoporous silicon is observed as the islands sep...

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Veröffentlicht in:Technical physics letters 2010-06, Vol.36 (6), p.538-540
Hauptverfasser: Tynyshtykbaev, K. B., Ryabikin, Yu. A., Tokmoldin, S. Zh, Aitmukan, T., Rakhymetov, B. A., Vermenichev, R. B.
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Sprache:eng
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Zusammenfassung:The results of electron microscopy investigation of morphology of porous silicon (PS) received under long anodic etching by using internal current source in electrolytes such as HF:H 2 O 2 :H 2 C 5 OH and HF:H 2 O 2 are presented. Mosaic structure of nanoporous silicon is observed as the islands separated by silicon ledges. It was shown that these islands are presented as assemble of oxidized nanocrystallites and silicon ledges. The results of elemental analysis of islands of oxidized nanocrystallites and silicon ledges are presented.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785010060155