High-power semiconductor radiation sources based on 100-W diode laser bars for pumping solid-state lasers
High-power semiconductor radiation sources with a total optical output power of up to 5 kW and a power density of 400 W/cm 2 have been developed, representing a vertical stack of quasi-continuous pulsed (500 μs) 100-W diode laser bars. Based on such sources, a solid-state laser with an output radiat...
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Veröffentlicht in: | Technical physics letters 2008, Vol.34 (1), p.46-47 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | High-power semiconductor radiation sources with a total optical output power of up to 5 kW and a power density of 400 W/cm
2
have been developed, representing a vertical stack of quasi-continuous pulsed (500 μs) 100-W diode laser bars. Based on such sources, a solid-state laser with an output radiation energy of up to 150 mJ has been created, which is intended for information systems, laser radars, spectrum analyzers, etc. |
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ISSN: | 1063-7850 1090-6533 |
DOI: | 10.1134/S1063785008010148 |