Distributed microgate bipolar switches: Onset conditions for dynamic breakdown at turn-off

A versatile compact technique for calculating dynamic avalanche breakdown conditions in the case of p + nn 0 ( p 0 ) pn + bipolar structures with distributed microgates cut off in a resistively loaded circuit is suggested. These conditions determine the breakdown-limited ultimate switching power of a specific device. Examples of calculating the current, voltage, and power boundaries of the safe operating area for Si- and 4H-SiC-based structures are given. It is found that structures with gates extracting minority carriers having a higher impact ionization coefficient (electrons from the p 0 -base for silicon or holes from the n 0 -base for 4H-SiC) are most prone to breakdown. On the contrary, structures with gates of the opposite type, i.e., those extracting holes from the p 0 -base for Si or electrons from the n 0 -base for 4H-SiC (such structures have not yet found wide application), are most stable against breakdown. It is found that implementation of such structures for Si switches with switching voltage U max = 5–7 kV may raise the maximal power per unit area from today’s ∼200 kW/cm 2 to a new theoretical level of 0.7–1.0 MW/cm 2 . For 4H-SiC switches with U max = 4.5–10.0 kV, a new level can be increased to 200 MW/cm 2 or higher.