Deposition of NiFe(200) and NiFe(111) textured films onto Si/SiO2 substrates by DC magnetron sputtering

The effect of substrate temperature T sub and bias voltage U bias on the texture of NiFe films with thickness d ∼ 30–340 nm deposited by DC magnetron sputtering onto Si(111)/SiO 2 substrates under working gas pressure ∼ 0.2 Pa has been investigated. It has been demonstrated that films grown at room substrate temperature have the (111) texture that is refined under a negative bias voltage. The deposition of films onto a grounded ( U bias ∼ 0) substrate heated to T sub ∼ 440–640 K results in the formation of textured NiFe(200) films.