Features of conductivity mechanisms in heavily doped compensated V1–x Ti x FeSb Semiconductor
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2016-07, Vol.50 (7), p.860-868 |
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| container_end_page | 868 |
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| container_issue | 7 |
| container_start_page | 860 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 50 |
| creator | Romaka, V. A. Rogl, P. Romaka, V. V. Kaczorowski, D. Stadnyk, Yu. V. Krayovskyy, V. Ya Horyn, A. M. |
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| doi_str_mv | 10.1134/S1063782616070204 |
| format | Article |
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| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2016-07, Vol.50 (7), p.860-868 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_S1063782616070204 |
| source | SpringerLink Journals - AutoHoldings |
| title | Features of conductivity mechanisms in heavily doped compensated V1–x Ti x FeSb Semiconductor |
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