High-power pulse-emitting lasers in the 1.5–1.6 μm spectral region
The metalorganic chemical vapor deposition (MOCVD) method is used for growing heterostructures in the system of AlGaInAs/InP materials with different versions of the configuration of the active region. Laser diodes are fabricated from the grown heterostructures; with the purpose of increasing the ou...
Gespeichert in:
| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2014, Vol.48 (1), p.95-98 |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 98 |
|---|---|
| container_issue | 1 |
| container_start_page | 95 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 48 |
| creator | Gorlachuk, P. V. Ryaboshtan, Yu. L. Marmalyuk, A. A. Kurnosov, V. D. Kurnosov, K. V. Zhuravleva, O. V. Romantsevich, V. I. Chernov, R. V. Ivanov, A. V. Simakov, V. A. |
| description | The metalorganic chemical vapor deposition (MOCVD) method is used for growing heterostructures in the system of AlGaInAs/InP materials with different versions of the configuration of the active region. Laser diodes are fabricated from the grown heterostructures; with the purpose of increasing the output optical power, the laser diodes are integrated into bars and arrays. Single laser diodes exhibit a high output power of ∼6 W in the pulse mode. The laser bars exhibit an output power of 20 W in the pulse mode. The highest achieved pulse output optical power for an array of 30 elements amounts to ∼110 W. |
| doi_str_mv | 10.1134/S106378261401014X |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_sprin</sourceid><recordid>TN_cdi_crossref_primary_10_1134_S106378261401014X</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1134_S106378261401014X</sourcerecordid><originalsourceid>FETCH-LOGICAL-c240t-ddc1194c553db7bfb59867b46fa8b656a9e1db1300ad9e430ac101cb3fe0076b3</originalsourceid><addsrcrecordid>eNp9kEFOwzAQRS0EEqVwAHa-gMNM7DjJElWFVqrEApDYRbbjpK7SJLJTIXbcgetwBg7BSUhUdkisZqT5b_T_J-QaIULk4uYRQfI0iyUKQEDxckJmCDkwKdL8dNolZ9P9nFyEsANAzBIxI8uVq7es716tp_2hCZbZvRsG19a0UcH6QF1Lh62lGCXf7x8YSfr1uaeht2bwqqHe1q5rL8lZpUb46nfOyfPd8mmxYpuH-_XidsNMLGBgZWkQc2GShJc61ZVO8kymWshKZVomUuUWS40cQJW5FRyUGbMYzSsLkErN5wSPf43vQvC2Knrv9sq_FQjF1EPxp4eRiY9MGLVtbX2x6w6-HW3-A_0AMVVgSQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High-power pulse-emitting lasers in the 1.5–1.6 μm spectral region</title><source>SpringerLink Journals - AutoHoldings</source><creator>Gorlachuk, P. V. ; Ryaboshtan, Yu. L. ; Marmalyuk, A. A. ; Kurnosov, V. D. ; Kurnosov, K. V. ; Zhuravleva, O. V. ; Romantsevich, V. I. ; Chernov, R. V. ; Ivanov, A. V. ; Simakov, V. A.</creator><creatorcontrib>Gorlachuk, P. V. ; Ryaboshtan, Yu. L. ; Marmalyuk, A. A. ; Kurnosov, V. D. ; Kurnosov, K. V. ; Zhuravleva, O. V. ; Romantsevich, V. I. ; Chernov, R. V. ; Ivanov, A. V. ; Simakov, V. A.</creatorcontrib><description>The metalorganic chemical vapor deposition (MOCVD) method is used for growing heterostructures in the system of AlGaInAs/InP materials with different versions of the configuration of the active region. Laser diodes are fabricated from the grown heterostructures; with the purpose of increasing the output optical power, the laser diodes are integrated into bars and arrays. Single laser diodes exhibit a high output power of ∼6 W in the pulse mode. The laser bars exhibit an output power of 20 W in the pulse mode. The highest achieved pulse output optical power for an array of 30 elements amounts to ∼110 W.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S106378261401014X</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>2012 ; Magnetic Materials ; Magnetism ; Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg ; October 13–16 ; Physics ; Physics and Astronomy</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2014, Vol.48 (1), p.95-98</ispartof><rights>Pleiades Publishing, Ltd. 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c240t-ddc1194c553db7bfb59867b46fa8b656a9e1db1300ad9e430ac101cb3fe0076b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S106378261401014X$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S106378261401014X$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,781,785,27928,27929,41492,42561,51323</link.rule.ids></links><search><creatorcontrib>Gorlachuk, P. V.</creatorcontrib><creatorcontrib>Ryaboshtan, Yu. L.</creatorcontrib><creatorcontrib>Marmalyuk, A. A.</creatorcontrib><creatorcontrib>Kurnosov, V. D.</creatorcontrib><creatorcontrib>Kurnosov, K. V.</creatorcontrib><creatorcontrib>Zhuravleva, O. V.</creatorcontrib><creatorcontrib>Romantsevich, V. I.</creatorcontrib><creatorcontrib>Chernov, R. V.</creatorcontrib><creatorcontrib>Ivanov, A. V.</creatorcontrib><creatorcontrib>Simakov, V. A.</creatorcontrib><title>High-power pulse-emitting lasers in the 1.5–1.6 μm spectral region</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The metalorganic chemical vapor deposition (MOCVD) method is used for growing heterostructures in the system of AlGaInAs/InP materials with different versions of the configuration of the active region. Laser diodes are fabricated from the grown heterostructures; with the purpose of increasing the output optical power, the laser diodes are integrated into bars and arrays. Single laser diodes exhibit a high output power of ∼6 W in the pulse mode. The laser bars exhibit an output power of 20 W in the pulse mode. The highest achieved pulse output optical power for an array of 30 elements amounts to ∼110 W.</description><subject>2012</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg</subject><subject>October 13–16</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kEFOwzAQRS0EEqVwAHa-gMNM7DjJElWFVqrEApDYRbbjpK7SJLJTIXbcgetwBg7BSUhUdkisZqT5b_T_J-QaIULk4uYRQfI0iyUKQEDxckJmCDkwKdL8dNolZ9P9nFyEsANAzBIxI8uVq7es716tp_2hCZbZvRsG19a0UcH6QF1Lh62lGCXf7x8YSfr1uaeht2bwqqHe1q5rL8lZpUb46nfOyfPd8mmxYpuH-_XidsNMLGBgZWkQc2GShJc61ZVO8kymWshKZVomUuUWS40cQJW5FRyUGbMYzSsLkErN5wSPf43vQvC2Knrv9sq_FQjF1EPxp4eRiY9MGLVtbX2x6w6-HW3-A_0AMVVgSQ</recordid><startdate>2014</startdate><enddate>2014</enddate><creator>Gorlachuk, P. V.</creator><creator>Ryaboshtan, Yu. L.</creator><creator>Marmalyuk, A. A.</creator><creator>Kurnosov, V. D.</creator><creator>Kurnosov, K. V.</creator><creator>Zhuravleva, O. V.</creator><creator>Romantsevich, V. I.</creator><creator>Chernov, R. V.</creator><creator>Ivanov, A. V.</creator><creator>Simakov, V. A.</creator><general>Springer US</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2014</creationdate><title>High-power pulse-emitting lasers in the 1.5–1.6 μm spectral region</title><author>Gorlachuk, P. V. ; Ryaboshtan, Yu. L. ; Marmalyuk, A. A. ; Kurnosov, V. D. ; Kurnosov, K. V. ; Zhuravleva, O. V. ; Romantsevich, V. I. ; Chernov, R. V. ; Ivanov, A. V. ; Simakov, V. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c240t-ddc1194c553db7bfb59867b46fa8b656a9e1db1300ad9e430ac101cb3fe0076b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>2012</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg</topic><topic>October 13–16</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gorlachuk, P. V.</creatorcontrib><creatorcontrib>Ryaboshtan, Yu. L.</creatorcontrib><creatorcontrib>Marmalyuk, A. A.</creatorcontrib><creatorcontrib>Kurnosov, V. D.</creatorcontrib><creatorcontrib>Kurnosov, K. V.</creatorcontrib><creatorcontrib>Zhuravleva, O. V.</creatorcontrib><creatorcontrib>Romantsevich, V. I.</creatorcontrib><creatorcontrib>Chernov, R. V.</creatorcontrib><creatorcontrib>Ivanov, A. V.</creatorcontrib><creatorcontrib>Simakov, V. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gorlachuk, P. V.</au><au>Ryaboshtan, Yu. L.</au><au>Marmalyuk, A. A.</au><au>Kurnosov, V. D.</au><au>Kurnosov, K. V.</au><au>Zhuravleva, O. V.</au><au>Romantsevich, V. I.</au><au>Chernov, R. V.</au><au>Ivanov, A. V.</au><au>Simakov, V. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-power pulse-emitting lasers in the 1.5–1.6 μm spectral region</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2014</date><risdate>2014</risdate><volume>48</volume><issue>1</issue><spage>95</spage><epage>98</epage><pages>95-98</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The metalorganic chemical vapor deposition (MOCVD) method is used for growing heterostructures in the system of AlGaInAs/InP materials with different versions of the configuration of the active region. Laser diodes are fabricated from the grown heterostructures; with the purpose of increasing the output optical power, the laser diodes are integrated into bars and arrays. Single laser diodes exhibit a high output power of ∼6 W in the pulse mode. The laser bars exhibit an output power of 20 W in the pulse mode. The highest achieved pulse output optical power for an array of 30 elements amounts to ∼110 W.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1134/S106378261401014X</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2014, Vol.48 (1), p.95-98 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_S106378261401014X |
| source | SpringerLink Journals - AutoHoldings |
| subjects | 2012 Magnetic Materials Magnetism Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg October 13–16 Physics Physics and Astronomy |
| title | High-power pulse-emitting lasers in the 1.5–1.6 μm spectral region |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T09%3A40%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_sprin&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-power%20pulse-emitting%20lasers%20in%20the%201.5%E2%80%931.6%20%CE%BCm%20spectral%20region&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Gorlachuk,%20P.%20V.&rft.date=2014&rft.volume=48&rft.issue=1&rft.spage=95&rft.epage=98&rft.pages=95-98&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S106378261401014X&rft_dat=%3Ccrossref_sprin%3E10_1134_S106378261401014X%3C/crossref_sprin%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |