High-power pulse-emitting lasers in the 1.5–1.6 μm spectral region

The metalorganic chemical vapor deposition (MOCVD) method is used for growing heterostructures in the system of AlGaInAs/InP materials with different versions of the configuration of the active region. Laser diodes are fabricated from the grown heterostructures; with the purpose of increasing the output optical power, the laser diodes are integrated into bars and arrays. Single laser diodes exhibit a high output power of ∼6 W in the pulse mode. The laser bars exhibit an output power of 20 W in the pulse mode. The highest achieved pulse output optical power for an array of 30 elements amounts to ∼110 W.