Ultralow-frequency photoelectric response of amorphous As2Se3 layers

The results of studying the photodielectric effect in amorphous layers of As 2 Se 3 are reported. Agreement between the experimental and theoretical functions of the relative variation in the conductivity in the infralow-frequency region is observed. The dispersion of the recombination coefficient e...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2013-07, Vol.47 (7), p.952-955
Hauptverfasser:	Anisimova, N. I., Bordovsky, V. A., Grabko, G. I., Castro, R. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous Magnetic Materials Magnetism Organic Semiconductors Physics Physics and Astronomy Vitreous
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The results of studying the photodielectric effect in amorphous layers of As 2 Se 3 are reported. Agreement between the experimental and theoretical functions of the relative variation in the conductivity in the infralow-frequency region is observed. The dispersion of the recombination coefficient exhibits a minimum. Possible causes of the observed dependences are discussed.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782613070038