Specific features of the temperature dependence of the conduction electron concentration in the narrow-gap and zero-gap states of Cd x Hg1 − x Te

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2012-03, Vol.46 (3), p.293-297
Hauptverfasser:	Aliev, S. A., Zulfigarov, E. I., Selim-zade, R. I.
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container_end_page	297
container_issue	3
container_start_page	293
container_title	Semiconductors (Woodbury, N.Y.)
container_volume	46
creator	Aliev, S. A. Zulfigarov, E. I. Selim-zade, R. I.
description
doi_str_mv	10.1134/S1063782612030025
format	Article
fullrecord	<record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1134_S1063782612030025</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1134_S1063782612030025</sourcerecordid><originalsourceid>FETCH-crossref_primary_10_1134_S10637826120300253</originalsourceid><addsrcrecordid>eNqdj01OAzEMhSMEEuXnAOx8gYF4Mp226wrUfbsfRYlTgtokclLxcwLWcENOwsxAV-xY-fl7frKeEDcobxFVc7dG2arZvG6xlkrKenoiJigXsmqb2eJ00K2qBv9cXOT8JCXifNpMxOc6kfHOG3Cky4EpQ3RQHgkK7RPxyMBSomApGDq6JgZ7MMXHALQjU7gXPTMUSp8ZsA_jYdDM8bna6gQ6WHgjjuOSiy4_z5YWXmC1Rfh6_-jVhq7EmdO7TNe_81Lgw_1muaoMx5yZXJfY7zW_dii7oX33p736T-Ybz45j-Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Specific features of the temperature dependence of the conduction electron concentration in the narrow-gap and zero-gap states of Cd x Hg1 − x Te</title><source>Springer Nature - Complete Springer Journals</source><creator>Aliev, S. A. ; Zulfigarov, E. I. ; Selim-zade, R. I.</creator><creatorcontrib>Aliev, S. A. ; Zulfigarov, E. I. ; Selim-zade, R. I.</creatorcontrib><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782612030025</identifier><language>eng</language><ispartof>Semiconductors (Woodbury, N.Y.), 2012-03, Vol.46 (3), p.293-297</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-crossref_primary_10_1134_S10637826120300253</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27915,27916</link.rule.ids></links><search><creatorcontrib>Aliev, S. A.</creatorcontrib><creatorcontrib>Zulfigarov, E. I.</creatorcontrib><creatorcontrib>Selim-zade, R. I.</creatorcontrib><title>Specific features of the temperature dependence of the conduction electron concentration in the narrow-gap and zero-gap states of Cd x Hg1 − x Te</title><title>Semiconductors (Woodbury, N.Y.)</title><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqdj01OAzEMhSMEEuXnAOx8gYF4Mp226wrUfbsfRYlTgtokclLxcwLWcENOwsxAV-xY-fl7frKeEDcobxFVc7dG2arZvG6xlkrKenoiJigXsmqb2eJ00K2qBv9cXOT8JCXifNpMxOc6kfHOG3Cky4EpQ3RQHgkK7RPxyMBSomApGDq6JgZ7MMXHALQjU7gXPTMUSp8ZsA_jYdDM8bna6gQ6WHgjjuOSiy4_z5YWXmC1Rfh6_-jVhq7EmdO7TNe_81Lgw_1muaoMx5yZXJfY7zW_dii7oX33p736T-Ybz45j-Q</recordid><startdate>201203</startdate><enddate>201203</enddate><creator>Aliev, S. A.</creator><creator>Zulfigarov, E. I.</creator><creator>Selim-zade, R. I.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201203</creationdate><title>Specific features of the temperature dependence of the conduction electron concentration in the narrow-gap and zero-gap states of Cd x Hg1 − x Te</title><author>Aliev, S. A. ; Zulfigarov, E. I. ; Selim-zade, R. I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-crossref_primary_10_1134_S10637826120300253</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aliev, S. A.</creatorcontrib><creatorcontrib>Zulfigarov, E. I.</creatorcontrib><creatorcontrib>Selim-zade, R. I.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Aliev, S. A.</au><au>Zulfigarov, E. I.</au><au>Selim-zade, R. I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Specific features of the temperature dependence of the conduction electron concentration in the narrow-gap and zero-gap states of Cd x Hg1 − x Te</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><date>2012-03</date><risdate>2012</risdate><volume>46</volume><issue>3</issue><spage>293</spage><epage>297</epage><pages>293-297</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><doi>10.1134/S1063782612030025</doi></addata></record>
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issn	1063-7826 1090-6479
language	eng
recordid	cdi_crossref_primary_10_1134_S1063782612030025
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title	Specific features of the temperature dependence of the conduction electron concentration in the narrow-gap and zero-gap states of Cd x Hg1 − x Te
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T03%3A02%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Specific%20features%20of%20the%20temperature%20dependence%20of%20the%20conduction%20electron%20concentration%20in%20the%20narrow-gap%20and%20zero-gap%20states%20of%20Cd%20x%20Hg1%20%E2%88%92%20x%20Te&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Aliev,%20S.%20A.&rft.date=2012-03&rft.volume=46&rft.issue=3&rft.spage=293&rft.epage=297&rft.pages=293-297&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782612030025&rft_dat=%3Ccrossref%3E10_1134_S1063782612030025%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true