Mechanism of forward current transport in modified-surface Au-CdTe photodiodes

Mechanism of forward current transport in modified-surface Au-CdTe photodiodes

Current-voltage characteristics of surface-barrier diodes based on n -CdTe substrates treated in aqueous solutions of alkali metal salts were studied. It was found that the forward current is controlled by recombination processes in the space-charge region and the above-barrier carrier transport.

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2009-05, Vol.43 (5), p.602-603
Hauptverfasser: Makhnij, V. P., Bojko, Yu. N., Skrypnyk, N. V.
Format: Artikel
Sprache:eng
Schlagworte:
Interfaces
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Semiconductor Structures
Surfaces
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Zusammenfassung:Current-voltage characteristics of surface-barrier diodes based on n -CdTe substrates treated in aqueous solutions of alkali metal salts were studied. It was found that the forward current is controlled by recombination processes in the space-charge region and the above-barrier carrier transport.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378260905011X