Modification of the positive photoresist surface by ion implantation

It is experimentally shown by atomic-force microscopy methods that cone-shaped structures that are nonuniformly distributed over the surface are formed on the FP2190 positive photoresist surface in the process of ion implantation. The height, the base diameter, and the distribution density of these...

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Veröffentlicht in:Russian microelectronics 2015-11, Vol.44 (6), p.399-403
Hauptverfasser: Brinkevich, D. I., Brinkevich, S. D., Lukashevich, M. G., Prosolovich, V. S., Odzhaev, V. B., Yankovskii, Yu. N.
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Sprache:eng
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Zusammenfassung:It is experimentally shown by atomic-force microscopy methods that cone-shaped structures that are nonuniformly distributed over the surface are formed on the FP2190 positive photoresist surface in the process of ion implantation. The height, the base diameter, and the distribution density of these structures depend on the irradiation conditions and type of implanted ions. The morphological changes of the photoresist surface, observed during the implantation, are specified by the relaxation of the stresses formed in the manufacturing process of the polymer film and radiochemical processes in the near-surface layer of the photoresist.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739715060025