The influence of constructive parameters on the threshold voltage of nanodimensional p-Channel SOI MOS transistors

The influence of constructive parameters on the threshold voltage of nanodimensional p-Channel SOI MOS transistors

The influence of the thickness of the silicon film and hole concentration in the p -channel nanodimensional MOS transistor based on the SOI structure is considered. The formulas for the computation of these dependences are derived and graphic dependences are presented.

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Veröffentlicht in:Russian microelectronics 2012-12, Vol.41 (7), p.379-382
Hauptverfasser: Petrov, B. K., Krasnov, A. A.
Format: Artikel
Sprache:eng
Schlagworte:
Electrical Engineering
Engineering
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Zusammenfassung:The influence of the thickness of the silicon film and hole concentration in the p -channel nanodimensional MOS transistor based on the SOI structure is considered. The formulas for the computation of these dependences are derived and graphic dependences are presented.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739712070207