Features of the formation of a low-resistance Ge/Au/Ni/Ti/Au ohmic contact to n-i-GaAs

The influence of the modes and conditions of deposition of the Ti film of the diffusion barrier on the parameters of the Ge/Au/Ni/Ti/Au ohmic contacts to n - i -GaAs were investigated. Deposition modes of the Ti films, in which a 50-fold increase in the reduced contact resistance, as well as an increase in thermal stability of the morphology of the edge of contact pads, are determined. The factors affecting the reduced contact resistance are the angle under which the Ti atoms enter the substrate surface, the deposition rate of the Ti film, and the pressure of the residual atmosphere during deposition of the film of the diffusion barrier. The factor affecting the thermal stability of the morphology of the edge of the contact pads is apparently the angle under which the Ti atoms enter the substrate surface.