Features of charge formation and relaxation in SOS structures under the effect of ionizing radiation

Features of charge formation in SOS structures under irradiation are investigated experimentally. A model that makes it possible to describe the dependence that the kinetics of charge accumulation and relaxation in the Si-Al 2 O 3 system has on the field strength, temperature, intensity, and type of...

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Veröffentlicht in:	Russian microelectronics 2011-05, Vol.40 (3), p.194-208
Hauptverfasser:	Sogoyan, A. V., Davydov, G. G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrical Engineering Engineering Influence of Dose Factors on the Resistance of Microelectronic Devices
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Features of charge formation in SOS structures under irradiation are investigated experimentally. A model that makes it possible to describe the dependence that the kinetics of charge accumulation and relaxation in the Si-Al 2 O 3 system has on the field strength, temperature, intensity, and type of ionizing radiation is suggested. The influence of the two-dimensional character of processes on the charge formation in the SOS MOS devices is investigated.
ISSN:	1063-7397 1608-3415
DOI:	10.1134/S1063739711030085