A semianalytical model of a thin-channel field-effect transistor

A semianalytical model of a field-effect ballistic nanotransistor with an ultrathin channel, which is used to describe transistors with both single and double gates, is suggested. The potential distributions and the electron concentrations in the transistor channel are calculated in terms of this mo...

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Veröffentlicht in:	Russian microelectronics 2009-11, Vol.38 (6), p.393-405
Hauptverfasser:	Khomyakov, A. N., V’yurkov, V. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Device and Process Modeling and Simulation Electrical Engineering Engineering
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	A semianalytical model of a field-effect ballistic nanotransistor with an ultrathin channel, which is used to describe transistors with both single and double gates, is suggested. The potential distributions and the electron concentrations in the transistor channel are calculated in terms of this model. The afterthreshold and subthreshold volt-ampere characteristics are plotted. A comparison with a more correct numerical model is given.
ISSN:	1063-7397 1608-3415
DOI:	10.1134/S1063739709060043